for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 gaas phemt mmic low noise amplifier, 5 - 10 ghz v01.0911 general description features functional diagram noise f igure: 1.6 db gain: 20 db p 1db o utput p ower: 16 dbm s upply voltage: +3.5 v @ 80 ma o utput ip 3: 28 dbm 50 o hm matched i nput/ o utput die s ize: 1.33 x 1.04 x 0.1 mm electrical specifcations , t a = +25 c, vdd1 = vdd2 = +3.5v, idd = 80 ma [1] typical applications this h m c902 is ideal for: ? point-to-point radios ? point-to-multi-point radios ? military & space ? test instrumentation ? ism, unii & wcs the HMC902 is a gaas mmic low noise amplifer, which operates between 5 and 10 ghz. this self- biased lna provides 20 db of small signal gain, 1.6 db noise fgure, and output ip3 of +28 dbm, while requiring only 80 ma from a +3.5v supply. the p 1db output power of 16 dbm enables the l na to function as a lo driver for balanced, i/q or image reject mixers. the h m c902 also features i / o s that are matched to 50 o hms for ease of integration into multi- chip-modules ( m c m s). all data is taken with the chip in a 50 o hm test fxture connected via two 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mils) length. HMC902 p arameter m in. typ. m ax. units f requency r ange 5 - 10 ghz gain 17 20 db gain variation over temperature 0.012 db / c noise f igure 1.6 2.1 db i nput r eturn l oss 12 db o utput r eturn l oss 15 db o utput p ower for 1 db compression 16 dbm s aturated o utput p ower ( p sat) 17.5 dbm o utput third o rder i ntercept ( ip 3) 28 dbm s upply current ( i dd) 80 ma [1] vgg1 = vgg2 = no connection, for normal, self-biased operation.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 HMC902 v01.0911 gaas phemt mmic low noise amplifier, 5 - 10 ghz gain vs. temperature output return loss vs. temperature broadband gain & return loss input return loss vs. temperature output ip3 vs. temperature noise figure vs. temperature -30 -25 -20 -15 -10 -5 0 5 6 7 8 9 10 11 +25c +85c -40c return loss (db) frequency (ghz) 5 10 15 20 25 30 35 5 6 7 8 9 10 +25c +85c -40c ip3 (dbm) frequency (ghz) -30 -25 -20 -15 -10 -5 0 4 5 6 7 8 9 10 11 +25c +85c -55c return loss (db) frequency (ghz) 15 17 19 21 23 25 4 5 6 7 8 9 10 11 +25c +85c -55c gain (db) frequency (ghz) -25 -15 -5 5 15 25 3 5 7 9 11 13 s21 s11 s22 response (db) frequency (ghz) 0 1 2 3 4 5 6 4 5 6 7 8 9 10 11 +25c +85c -55c noise figure (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 HMC902 v01.0911 gaas phemt mmic low noise amplifier, 5 - 10 ghz psat vs. temperature power compression @ 7 ghz p1db vs. temperature reverse isolation vs. temperature gain, noise figure & power vs. supply voltage @ 7 ghz -4 0 4 8 12 16 20 24 -21 -18 -15 -12 -9 -6 -3 0 3 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -60 -50 -40 -30 -20 -10 0 4 5 6 7 8 9 10 11 +25c +85c -55c isolation (db) frequency (ghz) 0 5 10 15 20 25 5 6 7 8 9 10 11 +25c +85c -55c psat (dbm) frequency (ghz) 0 5 10 15 20 25 4 5 6 7 8 9 10 11 +25c +85c -55c p1db (dbm) frequency (ghz) 8 10 12 14 16 18 20 22 0 1 2 3 4 5 6 7 3 3.5 4 p1db gain nf gain (db), p1db (dbm) noise figure (db) vdd (v)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 outline drawing absolute maximum ratings ele ct ros tat ic se n si t i v e de v ic e observe handling precautions drain bias voltage +4.5v rf i nput p ower +10 dbm gate bias voltage, vgg1 -0.8v to +0.2v gate bias voltage, vgg2 -0.8v to +0.2v channel temperature 175 c continuous p diss (t = 85 c) (derate 7 m w /c above 85 c) 0.63 w thermal r esistance (channel to die bottom) 143.8 c/ w s torage temperature -65 to +150 c o perating temperature -55 to +85 c HMC902 v01.0911 gaas phemt mmic low noise amplifier, 5 - 10 ghz this die utilizes fragile air bridges. any pick-up tools used must not contact the die in the cross hatched area. n ot es : 1. a ll d ime n sio n s i n i nch es [ millime t ers ] 2. d ie th i ckn ess is 0.004 (0.100) 3. typical bond pad is 0.004 (0.100) square 4. b o nd p ad me ta li zat io n: g ol d 5. back si d e me ta lli zat io n: g ol d 6. backside metal is ground 7. no connection required for unlabeled bond pads 8. o v er a ll d ie si z e is 0.002 die packaging information [1] s tandard alternate g p -2 (gel p ack) [2] [1] refer to the packaging information section on our website for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 HMC902 v01.0911 gaas phemt mmic low noise amplifier, 5 - 10 ghz pad descriptions assembly diagram p ad number f unction description i nterface s chematic 1 rfi n this pin is matched to 50 o hms 2, 3 vdd2, vdd1 p ower supply voltage for the amplifer see assembly for required external components. 4 rfout this pin is matched to 50 o hms 5, 6 vgg1, vgg2 optional gate control for amplifer. if left open, the amplifer will run at standard current. negative voltage applied will reduce current. die bottom gnd die bottom must be connected to rf /dc ground.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 HMC902 v01.0911 gaas phemt mmic low noise amplifier, 5 - 10 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). m icrostrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based es d protec - tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. d o n o t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do n o t expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with two 1 mil wires are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.254mm (0.0 1 0?) thic k mmic wi re bond rf gr ound plane 0.254mm (0.0 1 0?) thic k alumina thin f ilm substrat e 0.07 6mm (0.003?) f igur e 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab
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